Accurate evaluation of specific contact resistivity between InAs/Ni–InAs alloy using a multi-sidewall transmission line method

A Ni–InAs source/drain nMOSFET is a promising future logic device. However, the specific contact resistivity, ρint, between InAs and Ni–InAs is difficult to evaluate accurately because of the complex junction structure. In this study, we develop a multi-sidewall transmission line method (MSTLM) for...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 59; no. SG; p. SGGA08
Main Authors Sumita, Kei, Kato, Kimihiko, Takeyasu, Jun, Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi
Format Journal Article
LanguageEnglish
Published Tokyo Japanese Journal of Applied Physics 01.04.2020
Subjects
Electrical resistivity
Evaluation
MOSFETs
Statistical analysis
Substrates
Transmission lines
Online AccessGet full text

Cover

More Information
Summary:A Ni–InAs source/drain nMOSFET is a promising future logic device. However, the specific contact resistivity, ρint, between InAs and Ni–InAs is difficult to evaluate accurately because of the complex junction structure. In this study, we develop a multi-sidewall transmission line method (MSTLM) for the measurement of low contact resistivity with high accuracy. The MSTLM enables us to simplify the junction interface structure in terms of the resistance analysis, to eliminate the effects of the contact metal and to perform statistical analyses to mitigate sample variations. The high accuracy of measurement of ρint is demonstrated by combining InAs-on-insulator (InAs-OI) substrates with the MSTLM. The evaluated ρint of (3.0 ± 0.9) × 10−8 Ω cm2 for InAs with an electron concentration of 2 × 1018 cm−3 is found to be in good agreement with the theoretically calculated value under a Schottky barrier height of 0 eV.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab6cb3