The growth of III–V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

• Published in: Journal of alloys and compounds Vol. 506; no. 1; pp. 343 - 346
• Main Authors: Beh, K.P., Yam, F.K., Chin, C.W., Tneh, S.S., Hassan, Z.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 10.09.2010; Elsevier
• Subjects: Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; High work function metal contacts; InGaN; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; SEM; Surface double layers, schottky barriers, and work functions; Treatment of materials and its effects on microstructure and properties; XRD; InGaN; SEM; XRD; PL; High work function metal contacts; Work functions; Electrical conductivity; Vegard law; Photoluminescence; Plasma assisted processing; Gallium nitride; Thin films; Metallic thin films; Molecular beam epitaxy; Indium nitride; Electrical characteristic; Scanning electron microscopy; Gold; Annealing; Epitaxial layers; Aluminium nitride; Indium; III-V compound; Growth mechanism; Crystal faces; Iridium; Heterostructures; III-V semiconductors
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2010.06.204

This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.