Transition of gas sensing behavior in non-reduced graphene oxides with thermal annealing

Graphene oxide (GO) films were deposited via spin coating on SiO2/Si wafers patterned with interdigitated Pt electrodes. Gas sensing behaviors of GO films and their heat treated films at 200°C in argon atmosphere were characterized. Apparently, non-reduced graphene oxide exhibits n-type and reduced...

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Published inMaterials letters Vol. 136; pp. 164 - 167
Main Authors Park, Hyejin, Ahn, Hosang, Chung, Yoonsung, Baek Cho, Sung, Soo Yoon, Young, Kim, Dong-Joo
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2014
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Summary:Graphene oxide (GO) films were deposited via spin coating on SiO2/Si wafers patterned with interdigitated Pt electrodes. Gas sensing behaviors of GO films and their heat treated films at 200°C in argon atmosphere were characterized. Apparently, non-reduced graphene oxide exhibits n-type and reduced graphene oxide films show p-type behavior on ethanol gas. The change of oxygen functional groups and bond structure are suggested to explain the transition. The combinatorial use of GO and reduced GO (r-GO) in a gas sensor array will provide practical solutions to measure various gases with high selectivity and sensitivity. •Non-reduced graphene oxide films fabricated by a simple spin coating method were demonstrated to measure ethanol gas with high sensitivity.•Transition from n- to p-type gas sensing behavior was observed by heat treatment of non-reduced graphene oxide.•The transition from non-reduced to reduced graphene oxide was confirmed using XPS and FTIR.
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ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2014.07.184