Transition of gas sensing behavior in non-reduced graphene oxides with thermal annealing
Graphene oxide (GO) films were deposited via spin coating on SiO2/Si wafers patterned with interdigitated Pt electrodes. Gas sensing behaviors of GO films and their heat treated films at 200°C in argon atmosphere were characterized. Apparently, non-reduced graphene oxide exhibits n-type and reduced...
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Published in | Materials letters Vol. 136; pp. 164 - 167 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.12.2014
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Subjects | |
Online Access | Get full text |
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Summary: | Graphene oxide (GO) films were deposited via spin coating on SiO2/Si wafers patterned with interdigitated Pt electrodes. Gas sensing behaviors of GO films and their heat treated films at 200°C in argon atmosphere were characterized. Apparently, non-reduced graphene oxide exhibits n-type and reduced graphene oxide films show p-type behavior on ethanol gas. The change of oxygen functional groups and bond structure are suggested to explain the transition. The combinatorial use of GO and reduced GO (r-GO) in a gas sensor array will provide practical solutions to measure various gases with high selectivity and sensitivity.
•Non-reduced graphene oxide films fabricated by a simple spin coating method were demonstrated to measure ethanol gas with high sensitivity.•Transition from n- to p-type gas sensing behavior was observed by heat treatment of non-reduced graphene oxide.•The transition from non-reduced to reduced graphene oxide was confirmed using XPS and FTIR. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0167-577X 1873-4979 |
DOI: | 10.1016/j.matlet.2014.07.184 |