Fluorine effects in n-p-n double-diffused polysilicon emitter bipolar transistors

We demonstrate that fluorine incorporation in the polysilicon emitter of n-p-n double-diffused bipolar transistors during BF/sub 2/ implantation at a dose of 1/spl times/10/sup 15/ cm/sup -2/ significantly alters the device electrical characteristics. In particular, tunneling emitter/base currents a...

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Bibliographic Details
Published inIEEE electron device letters Vol. 17; no. 9; pp. 434 - 436
Main Authors Gravier, T., Kirtsch, J., d'Anterroches, C., Chantre, A.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1996
Subjects
Annealing
Bipolar transistors
Boron
Electric variables
Fabrication
Implants
Silicon
Telecommunications
Tunneling
Voltage
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Summary:We demonstrate that fluorine incorporation in the polysilicon emitter of n-p-n double-diffused bipolar transistors during BF/sub 2/ implantation at a dose of 1/spl times/10/sup 15/ cm/sup -2/ significantly alters the device electrical characteristics. In particular, tunneling emitter/base currents are observed at both forward and reverse voltages, due to excessive base dopant concentration at the junction. Fluorine-enhanced interfacial oxide break-up and epitaxial realignment of the poly-Si emitter are shown to be responsible for these results.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.536284