Structural and electric properties of BaSn0.15Ti0.85O3 films on ITO/glass substrate by RF sputtering from powder target

• Published in: Materials letters Vol. 140; pp. 155 - 157
• Main Authors: Zhu, GS, Yan, DL, Xu, HR, Yu, AB
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.2015
• Subjects: BaSn0.15Ti0.85O3 (BTS); Density; Deposition; Deposition rate; Electrical properties; Electronic properties; Glass; Leakage current; Leakage current density; Sputtering; Thin films; Voltage; Thin films; Electronic properties; Deposition rate; BaSn0.15Ti0.85O3 (BTS); Leakage current density
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2014.11.030

BaSn0.15Ti0.85O3 (BTS) ferroelectric thin films have been deposited on the tin-doped indium oxide (ITO)/glass substrate by RF sputtering from a powder target, and the structural and electrical properties of the BTS film are also investigated at various deposition rates. The results indicate that leakage current of the BTS film is strongly related to the deposition rate, which decreases with increasing deposition rates. The leakage current density of the as-prepared film for a deposition rate of 40nm/min and thickness of 500nm is lower than 1.5×10−10A/cm2, while its dielectric tunability reaches 57.3% and dielectric loss remains only 0.01 at a bias voltage of 5V. From SIMS depth profiling of as-prepared BTS films, the lower leakage current density of the BTS film at a faster deposition rate may be attributed to the sharper BTS/ITO interface with a low inter-diffusion that results from the high deposition rate and shorter deposition time. •Leakage current of the BTS/ITO film decreases with increasing deposition rate.•The leakage current of the BST/ITO film is lower than 1.5×10−10A/cm2.•BST/ITO thin films with low leakage current can be obtained due to a powder target.