CMOS-compatible organic light-emitting diodes

We report a new method for the integration of light-emitting devices on a silicon substrate. As an active layer, we use unsubstituted PPV or PPV-based organic macromolecules with a p/sup +/-silicon anode and a cathode made from aluminum or titanium. The polymer is deposited by spin-coating the precu...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 44; no. 8; pp. 1249 - 1252
Main Authors Heinrich, L.M.H., Muller, J., Hilleringmann, U., Goser, K.F., Holmes, A., Do-Hoon Hwang, Stern, R.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.1997
Subjects
Aluminum
Anodes
Cathodes
Current measurement
Dry etching
Electrodes
Organic light emitting diodes
Polymers
Silicon
Titanium
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Summary:We report a new method for the integration of light-emitting devices on a silicon substrate. As an active layer, we use unsubstituted PPV or PPV-based organic macromolecules with a p/sup +/-silicon anode and a cathode made from aluminum or titanium. The polymer is deposited by spin-coating the precursor, followed by a thermal conversion step to form the macromolecules. All process steps, including the possibility of dry etching of the active layer and the upper electrode, are typical for MOS technology. Spectrum analysis, current-voltage, and intensity measurements have been carried out for device characterization. These organic light-emitting diodes allow the monolithic integration of microelectronic circuits and light-emitting devices on one silicon chip applying only typical MOS process steps.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.605463