A thick SOI UVLD LIGBT on partial membrane

A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane （UVLD PM LIGBT） is proposed. The silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can...

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Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 2; pp. 57 - 60
Main Author 王卓 叶俊 雷磊 乔明 张波 李肇基
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.02.2011
Subjects
Breakdown
Diffusion
Electric potential
LIGBT
Membranes
Oxides
Semiconductors
Silicon substrates
SOI
Voltage
击穿电压
区位优势
承载能力
掺杂分布
组合结构
膜
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Summary:A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane （UVLD PM LIGBT） is proposed. The silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, the thick SOI LIGBT with the advantage of a large current flowing and a thermal diffusing area achieves a strong current carrying capability and a low junction temperature. The current carrying capability （VAnode = 6 V, VGate = 15 V） increases by 16% and the maximal junction temperature （1 mW/μm） decreases by 30 K in comparison with that of a conventional thin SO1 structure.
Bibliography:SOI LIGBT; UVLD; partial membrane; current carrying capability; junction temperature
TN432.03
current carrying capability
TN386.1
partial membrane
SOI LIGBT
junction temperature
11-5781/TN
UVLD
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/2/024008