Heterogeneous III–V silicon photonic integration: components and characterization

• Published in: Frontiers of information technology & electronic engineering Vol. 20; no. 4; pp. 472 - 480
• Main Authors: Zhang, Shang-jian, Liu, Yong, Lu, Rong-guo, Sun, Bao, Yan, Lian-shan
• Format: Journal Article
• Language: English
• Published: Hangzhou Zhejiang University Press 01.04.2019; Springer Nature B.V; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China%Center for Information Photonics and Communications, School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China
• Subjects: CMOS; Communications Engineering; Computer Hardware; Computer Science; Computer Systems Organization and Communication Networks; Diodes; Electrical Engineering; Electronics and Microelectronics; Instrumentation; Lasers; Networks; Optical interconnects; Photonics; Quantum dots; Review; Science; Semiconductors; Silicon; Heterogeneous photonic integration; Optical interconnection; On-wafer characterization; O439; Optical interconnection; On-wafer characterization; Heterogeneous photonic integration
• ISSN: 2095-9184; 2095-9230
• DOI: 10.1631/FITEE.1800482

Heterogeneous III–V silicon (Si) photonic integration is considered one of the key methods for realizing power- and cost-effective optical interconnections, which are highly desired for future high-performance computers and datacenters. We review the recent progress in heterogeneous III–V/Si photonic integration, including transceiving devices and components. We also describe the progress in the on-wafer characterization of photonic integration circuits, especially on the heterogeneous III–V/Si platform.