90 °C continuous-wave operation of GaInAsP/InP membrane distributed-reflector laser on Si substrate

The temperature dependence of a GaInAsP/InP membrane distributed-reflector laser bonded on a Si substrate - which showed a low threshold current (0.29 mA) and a relatively high differential quantum efficiency (23% from the front side) at 20 °C - was measured. A characteristic temperature of the thre...

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Bibliographic Details
Published inApplied physics express Vol. 10; no. 3; pp. 32702 - 32705
Main Authors Hiratani, Takuo, Inoue, Daisuke, Tomiyasu, Takahiro, Fukuda, Kai, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2017
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Summary:The temperature dependence of a GaInAsP/InP membrane distributed-reflector laser bonded on a Si substrate - which showed a low threshold current (0.29 mA) and a relatively high differential quantum efficiency (23% from the front side) at 20 °C - was measured. A characteristic temperature of the threshold current, T0, of 84 K and a sub-mA threshold current operation up to 90 °C were obtained under a continuous-wave (CW) condition. Furthermore, single-mode operation up to 80 °C was also obtained.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.032702