Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs

• Published in: IEEE transactions on electron devices Vol. 68; no. 4; pp. 1659 - 1663
• Main Authors: Zhu, Li, He, Yongli, Chen, Chunsheng, Zhu, Ying, Shi, Yi, Wan, Qing
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Data processing; Electrolytes; Gallium; Image enhancement; Indium gallium zinc oxide; Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs); Logic gates; Modulation; Neuromorphics; persistent photoconductivity (PPC); Photoconductivity; photoelectric synapses; Photoelectricity; Semiconductor devices; Short term; Solids; synergistic modulation; Thin film transistors; Transistors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2021.3060687

Neuromorphic devices are of great significance for next generation energy-efficient brain-like computing and perception. Oxide-based photoelectric neuromorphic transistors are very promising due to the proton-related electric-double-layer (EDL) effect and persistent photoconductivity behavior. In this study, indium-gallium-zinc-oxide (IGZO)-based photoelectric neuromorphic thin-film transistors (TFTs) with tunable synaptic plasticity are proposed. Some important synaptic functions, such as excitatory postsynaptic current, multipulse facilitation, and long-term plasticity, can be effectively tuned by the photoelectric synergistic modulation. More importantly, under the photoelectric synergistic modulation, the temporary short-term memory can be converted into permanent long-term memory. And the voltage coordinated modulation can enhance the image in the pixel and the ability of real-time data processing of the input visual information. Our results are very important for the development of photoelectric neuromorphic devices with configurable dynamic functions.