Metal/PS/c-Si photodetectors based on unoxidized and oxidized porous silicon
Unoxidized and oxidized porous silicon (PS) based metal/PS/c-Si photodetector structures have been prepared by anodization of 10 and 20 000 Ω cm p-type silicon (c-Si) substrates. A quantum efficiency up to 0.7–0.8 in the wavelength range 0.4–0.7 μm, a detectivity up to 6×10 11 cm Hz 1/2/W and a resp...
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Published in | Solid-state electronics Vol. 45; no. 9; pp. 1607 - 1611 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.09.2001
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Subjects | |
Online Access | Get full text |
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Summary: | Unoxidized and oxidized porous silicon (PS) based metal/PS/c-Si photodetector structures have been prepared by anodization of 10 and 20
000
Ω
cm p-type silicon (c-Si) substrates. A quantum efficiency up to 0.7–0.8 in the wavelength range 0.4–0.7 μm, a detectivity up to 6×10
11 cm
Hz
1/2/W and a response time less than 2 ns were obtained. It is shown that the noise characteristics of the best device structures are determined by a generation current. We found that in oxidized device structures and structures made from highly resistive substrates a highly conductive inversion (n-type) layer is formed in the c-Si substrate adjacent to the PS/c-Si heterojunction. The presence of this inversion layer leads to an increase of the active device area, capacitance, noise current and response time. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0038-1101 1879-2405 |
DOI: | 10.1016/S0038-1101(01)00154-X |