Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating

The extrinsic photoconductivity of an n-type GaAs thin-film structure under backgating has been studied. It is shown that this photoconductivity is a nonmonotonic function of negative substrate voltage, namely, the magnitude of the photoconductivity shows a maximum. This is due to a sharp increase i...

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Published inMicroelectronics Vol. 31; no. 4; pp. 267 - 269
Main Authors Prokhorov, E.F, Gorev, N.B, Kodzhespirova, I.F, Kovalenko, Y.A
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.04.2000
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Summary:The extrinsic photoconductivity of an n-type GaAs thin-film structure under backgating has been studied. It is shown that this photoconductivity is a nonmonotonic function of negative substrate voltage, namely, the magnitude of the photoconductivity shows a maximum. This is due to a sharp increase in the magnitude of the photoconductivity caused by an illumination-induced change in the backgating threshold voltage and to its subsequent decrease caused by the accumulation of excess carriers near the film–substrate interface. The calculated results are in a qualitative agreement with the experimental data.
Bibliography:ObjectType-Article-2
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ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/S0026-2692(99)00141-X