Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating
The extrinsic photoconductivity of an n-type GaAs thin-film structure under backgating has been studied. It is shown that this photoconductivity is a nonmonotonic function of negative substrate voltage, namely, the magnitude of the photoconductivity shows a maximum. This is due to a sharp increase i...
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Published in | Microelectronics Vol. 31; no. 4; pp. 267 - 269 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.04.2000
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Online Access | Get full text |
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Summary: | The extrinsic photoconductivity of an n-type GaAs thin-film structure under backgating has been studied. It is shown that this photoconductivity is a nonmonotonic function of negative substrate voltage, namely, the magnitude of the photoconductivity shows a maximum. This is due to a sharp increase in the magnitude of the photoconductivity caused by an illumination-induced change in the backgating threshold voltage and to its subsequent decrease caused by the accumulation of excess carriers near the film–substrate interface. The calculated results are in a qualitative agreement with the experimental data. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1879-2391 0026-2692 1879-2391 |
DOI: | 10.1016/S0026-2692(99)00141-X |