Zapping thin film transistors
It was expected that hydrogenated amorphous silicon thin film transistors (α-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD prote...
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| Published in | Microelectronics and reliability Vol. 42; no. 4; pp. 747 - 765 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
2002
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| Abstract | It was expected that hydrogenated amorphous silicon thin film transistors (α-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit. The goal of this paper was to identify and to model failure under ESD zap. The drain of grounded gate TFTs has been stressed applying repeated square voltage pulses of different duration (100 ns to 10 s). The evolution and the mechanisms of the pre-breakdown degradation will be presented and discussed. Finally, the temperature distribution across an α-Si:H TFT under applied stress will be simulated by means of coupled electro-thermal simulations. |
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| AbstractList | It was expected that hydrogenated amorphous silicon thin film transistors ( alpha -Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit. The goal of this paper was to identify and to model failure under ESD zap. The drain of grounded gate TFTs has been stressed applying repeated square voltage pulses of different duration (100 ns to 10 s). The evolution and the mechanisms of the pre-breakdown degradation will be presented and discussed. Finally, the temperature distribution across an alpha -Si:H TFT under applied stress will be simulated by means of coupled electro-thermal simulations. copyright 2002 Elsevier Science Ltd. All rights reserved. It was expected that hydrogenated amorphous silicon thin film transistors (α-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit. The goal of this paper was to identify and to model failure under ESD zap. The drain of grounded gate TFTs has been stressed applying repeated square voltage pulses of different duration (100 ns to 10 s). The evolution and the mechanisms of the pre-breakdown degradation will be presented and discussed. Finally, the temperature distribution across an α-Si:H TFT under applied stress will be simulated by means of coupled electro-thermal simulations. |
| Author | Kuper, F.G. Tošić Golo, N. Mouthaan, T. |
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| Cites_doi | 10.1063/1.100704 10.1109/16.182519 10.1016/0921-4526(91)90108-Q 10.1143/JJAP.37.5914 10.1109/16.535353 10.1063/1.115512 10.1109/16.40933 10.1016/S0026-2714(01)00148-2 10.1557/PROC-297-999 10.1016/0038-1101(90)90239-B |
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| References_xml | – volume: 33 start-page: 553 year: 1990 end-page: 560 ident: BIB6 article-title: Thermal failure in semiconductor devices publication-title: Solid-State Electron contributor: fullname: Campbell – start-page: 69 year: 1991 end-page: 81 ident: BIB4 article-title: Hydrogen diffusion and electronic metastability in amorphous siliscon publication-title: Physica B contributor: fullname: Street – volume: 297 start-page: 999 year: 1993 end-page: 1004 ident: BIB18 article-title: Current transport modelling in an amorphous silicon antifuse structure publication-title: Proc MRS Symp contributor: fullname: Seitchik – year: 1996 ident: BIB3 publication-title: TFT/LCD liquid crystal displays addressed by thin-film transistors contributor: fullname: Tsukada – volume: 54 start-page: 1323 year: 1989 end-page: 1325 ident: BIB16 article-title: Time and temperature dependence of instability mechanisms in amorphous silicon thin film transistors publication-title: Appl Phys Lett 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10.1109/16.40933 contributor: fullname: Powell – volume: 41 start-page: 1391 year: 2001 ident: 10.1016/S0026-2714(02)00041-0_BIB5 article-title: The time–voltage trade-off for the ESD damage threshold in amorphous silicon hydrogenated thin-film transistors publication-title: Microelectron Reliab doi: 10.1016/S0026-2714(01)00148-2 contributor: fullname: Tošić Golo – start-page: 269 year: 1996 ident: 10.1016/S0026-2714(02)00041-0_BIB15 article-title: Power-density-dependent failure of amorphous-Si TFT publication-title: AMLCD Proc contributor: fullname: Tada – start-page: 289 year: 2000 ident: 10.1016/S0026-2714(02)00041-0_BIB8 article-title: Transmission line model testing of top-gate amorphous silicon thin film transistors publication-title: Proc IRPS contributor: fullname: Tošić – volume: 297 start-page: 999 year: 1993 ident: 10.1016/S0026-2714(02)00041-0_BIB18 article-title: Current transport modelling in an amorphous silicon antifuse structure publication-title: Proc MRS Symp doi: 10.1557/PROC-297-999 contributor: fullname: Amarasekera – volume: 33 start-page: 553 issue: 5 year: 1990 ident: 10.1016/S0026-2714(02)00041-0_BIB6 article-title: Thermal failure in semiconductor devices publication-title: Solid-State Electron doi: 10.1016/0038-1101(90)90239-B contributor: fullname: Dwyer |
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