Steady and Transient Properties of Side-Gated Nano-Transistors

Using a two-dimensional ensemble Monte Carlo (EMC) method, the steady and transient properties of side-gated nanotransistors with single gate and double gate are studied in detail. Simulation results show that the double-gated nanotransistor has more powerful controlling ability on the channel than...

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Published inApplied Mechanics and Materials Vol. 475-476; no. Sensors, Measurement and Intelligent Materials II; pp. 1363 - 1367
Main Authors Wang, Y. N., Xu, Kun Yuan, Wang, Z.N.
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.12.2013
Subjects
Channels
Computer simulation
Devices
Drains
Gates
Nanostructure
Oscillations
Steady state
Plasma
Planar
Monte Carlo
Non-Transistor
THz
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Abstract Using a two-dimensional ensemble Monte Carlo (EMC) method, the steady and transient properties of side-gated nanotransistors with single gate and double gate are studied in detail. Simulation results show that the double-gated nanotransistor has more powerful controlling ability on the channel than the single-gated one. The transient processes of the drain current for the two devices are both about 3 ps, which imply that the working speed of the two devices may reach about 0.3 THz. The detail of transient processes for the double-gated nanotransistor is trivial. But for the single-gated nanotransistor, the drain current response shows obviously oscillating during approaching the next steady state. The phenomenon of drain current oscillations is also discussed.
AbstractList Using a two-dimensional ensemble Monte Carlo (EMC) method, the steady and transient properties of side-gated nanotransistors with single gate and double gate are studied in detail. Simulation results show that the double-gated nanotransistor has more powerful controlling ability on the channel than the single-gated one. The transient processes of the drain current for the two devices are both about 3 ps, which imply that the working speed of the two devices may reach about 0.3 THz. The detail of transient processes for the double-gated nanotransistor is trivial. But for the single-gated nanotransistor, the drain current response shows obviously oscillating during approaching the next steady state. The phenomenon of drain current oscillations is also discussed.
Author Xu, Kun Yuan
Wang, Y. N.
Wang, Z.N.
Author_xml – givenname: Y. N.
  surname: Wang
  fullname: Wang, Y. N.
  email: xuky@scnu.edu.cn
  organization: South China Normal University : School of Physics and Telecommunication Engineering
– givenname: Kun Yuan
  surname: Xu
  fullname: Xu, Kun Yuan
  email: xuky@scnu.edu.cn
  organization: South China Normal University : School of Physics and Telecommunication Engineering
– givenname: Z.N.
  surname: Wang
  fullname: Wang, Z.N.
  email: xuky@scnu.edu.cn
  organization: South China Normal University : School of Physics and Telecommunication Engineering
BookMark eNqVkNtKAzEQhoMH0KrvsOCNILvmnPRGkFIP4Alar0PMzuJKTWqSUnx7s1ZQvPNiGJj5-Gf4RmjHBw8InRLccEz12Xq9bpLrwee-613jIZ9d3N01XImaK9kQJtkW2idS0lpxTbfRiGGmtBgrona-FrgeMyb30CilV4wlJ1zvo_NZBtt-VNa31Txan4YL1WMMS4i5h1SFrpr1LdRXNkNb3Vsf6g2XcojpEO12dpHg6LsfoKfL6XxyXd8-XN1MLm5rx5jONWBugQoqhcagGRXCaQmdYxwk0Z1tKXdEPhPilKBUdVJrQTTn5FmXYYfZATrZ5C5jeF9ByuatTw4WC-shrJIhQio8ZoIM6PEf9DWsoi_fGcKlUhILIgs12VAuhpQidGYZ-zcbPwzBZhBuinDzI9wU4aYIN0V4KWkG4SVluknJg5IM7uXXsX_kfAIMKZFu
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10.1063/1.1398324
10.1007/978-3-7091-6086-2
10.1007/s003390201334
10.1063/1.3336011
10.1088/0953-8984/20/38/384203
10.1103/physrevlett.80.3831
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10.1021/nl050779g
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ContentType Journal Article
Copyright 2014 Trans Tech Publications Ltd
Copyright Trans Tech Publications Ltd. Dec 2013
Copyright_xml – notice: 2014 Trans Tech Publications Ltd
– notice: Copyright Trans Tech Publications Ltd. Dec 2013
DBID AAYXX
CITATION
7SR
7TB
8BQ
8FD
8FE
8FG
ABJCF
ABUWG
AFKRA
BENPR
BFMQW
BGLVJ
CCPQU
D1I
DWQXO
FR3
HCIFZ
JG9
KB.
KR7
L6V
M7S
PDBOC
PQEST
PQQKQ
PQUKI
PRINS
PTHSS
7SP
L7M
DOI 10.4028/www.scientific.net/AMM.475-476.1363
DatabaseName CrossRef
Engineered Materials Abstracts
Mechanical & Transportation Engineering Abstracts
METADEX
Technology Research Database
ProQuest SciTech Collection
ProQuest Technology Collection
Materials Science & Engineering Collection
ProQuest Central (Alumni)
ProQuest Central
ProQuest Central
Continental Europe Database
Technology Collection
ProQuest One Community College
ProQuest Materials Science Collection
ProQuest Central
Engineering Research Database
SciTech Premium Collection (Proquest) (PQ_SDU_P3)
Materials Research Database
ProQuest Materials Science Database
Civil Engineering Abstracts
ProQuest Engineering Collection
ProQuest Engineering Database
Materials Science Collection
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
Engineering Collection
Electronics & Communications Abstracts
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Materials Research Database
Technology Collection
Technology Research Database
Mechanical & Transportation Engineering Abstracts
Materials Science Collection
ProQuest Central (Alumni Edition)
SciTech Premium Collection
ProQuest One Community College
ProQuest Central China
ProQuest Central
Engineered Materials Abstracts
ProQuest Engineering Collection
ProQuest Central Korea
Materials Science Database
Engineering Collection
ProQuest Materials Science Collection
Civil Engineering Abstracts
Engineering Database
ProQuest One Academic Eastern Edition
ProQuest Technology Collection
Continental Europe Database
ProQuest SciTech Collection
METADEX
ProQuest One Academic UKI Edition
Materials Science & Engineering Collection
Engineering Research Database
ProQuest One Academic
Advanced Technologies Database with Aerospace
Electronics & Communications Abstracts
DatabaseTitleList Materials Research Database
CrossRef

Civil Engineering Abstracts
Database_xml – sequence: 1
  dbid: 8FG
  name: ProQuest Technology Collection
  url: https://search.proquest.com/technologycollection1
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1662-7482
EndPage 1367
ExternalDocumentID 3155525771
10_4028_www_scientific_net_AMM_475_476_1363
GroupedDBID .DC
3V.
4.4
6J9
8FE
8FG
ABHXD
ABJCF
ABJNI
ABUWG
ACGFO
ACGFS
ACIWK
AFKRA
ALMA_UNASSIGNED_HOLDINGS
BENPR
BFMQW
BGLVJ
BPHCQ
CCPQU
CZ9
D1I
DB1
DKFMR
EBS
EJD
HCIFZ
KB.
KC.
L6V
M7S
P2P
PDBOC
PQQKQ
PROAC
PTHSS
RNS
RTP
AAYXX
ABDNZ
ACYGS
CITATION
7SR
7TB
8BQ
8FD
DWQXO
FR3
JG9
KR7
PQEST
PQUKI
PRINS
7SP
L7M
ID FETCH-LOGICAL-c338t-e04ae2526580e83255c86efc34e618fad24c16b11c75227f688518441b8b11f03
IEDL.DBID BENPR
ISBN 3037859717
9783037859711
ISSN 1660-9336
1662-7482
IngestDate Fri Jun 28 07:14:22 EDT 2024
Thu Oct 10 18:32:08 EDT 2024
Fri Aug 23 03:51:56 EDT 2024
Fri Oct 18 22:19:33 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue Sensors, Measurement and Intelligent Materials II
Keywords Plasma
Planar
Monte Carlo
Non-Transistor
THz
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c338t-e04ae2526580e83255c86efc34e618fad24c16b11c75227f688518441b8b11f03
Notes Selected, peer reviewed papers from the 2013 2nd International Conference on Sensors, Measurement and lntellligent Materials (ICSMIM 2013), November 16-17, 2013, Guangzhou, China
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
PQID 1467760516
PQPubID 2029177
PageCount 5
ParticipantIDs proquest_miscellaneous_1567093510
proquest_journals_1467760516
crossref_primary_10_4028_www_scientific_net_AMM_475_476_1363
transtech_journals_10_4028_www_scientific_net_AMM_475_476_1363
PublicationCentury 2000
PublicationDate 20131201
PublicationDateYYYYMMDD 2013-12-01
PublicationDate_xml – month: 12
  year: 2013
  text: 20131201
  day: 01
PublicationDecade 2010
PublicationPlace Zurich
PublicationPlace_xml – name: Zurich
PublicationTitle Applied Mechanics and Materials
PublicationYear 2013
Publisher Trans Tech Publications Ltd
Publisher_xml – name: Trans Tech Publications Ltd
References 1083969
1083968
1083979
1083967
1083978
1083980
1083966
1083977
1083965
1083976
1083964
1083975
1083974
1083973
1083972
1083971
1083982
1083970
1083981
References_xml – ident: 1083982
  doi: 10.1109/TNANO.2008.926348
– ident: 1083968
  doi: 10.1063/1.1398324
– ident: 1083974
  doi: 10.1007/978-3-7091-6086-2
– ident: 1083967
  doi: 10.1007/s003390201334
– ident: 1083964
  doi: 10.1063/1.3336011
– ident: 1083966
– ident: 1083971
  doi: 10.1088/0953-8984/20/38/384203
– ident: 1083965
  doi: 10.1103/physrevlett.80.3831
– ident: 1083975
  doi: 10.1117/12.609126
– ident: 1083977
  doi: 10.1063/1.1931051
– ident: 1083972
– ident: 1083973
– ident: 1083976
  doi: 10.1007/978-3-7091-6963-6_5
– ident: 1083980
  doi: 10.1063/1.2937175
– ident: 1083970
  doi: 10.1143/jjap.40.l867
– ident: 1083979
  doi: 10.1063/1.3095845
– ident: 1083969
  doi: 10.1021/nl050779g
– ident: 1083978
  doi: 10.1063/1.2832505
– ident: 1083981
  doi: 10.1063/1.2907490
SSID ssj0064148
ssj0001171676
Score 1.9619465
Snippet Using a two-dimensional ensemble Monte Carlo (EMC) method, the steady and transient properties of side-gated nanotransistors with single gate and double gate...
SourceID proquest
crossref
transtech
SourceType Aggregation Database
Publisher
StartPage 1363
SubjectTerms Channels
Computer simulation
Devices
Drains
Gates
Nanostructure
Oscillations
Steady state
Title Steady and Transient Properties of Side-Gated Nano-Transistors
URI https://www.scientific.net/AMM.475-476.1363
https://www.proquest.com/docview/1467760516
https://search.proquest.com/docview/1567093510
Volume 475-476
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3dS9xAEB96J1j7ILWteO31iNC3sjW72UxWKMq1eJXCyVU99G1JshvwJVEvPvjfO5PkPvpS-hBCPgjLLzsfv9nZGYAv6DWH1wqhMqmFLlISKVRSEBfySmWpdM1SzPQCz-f692182wXcFl1a5VInNoraVTnHyI9YohPyvSWe3j8I7hrFq6tdC40ebCliCmEftn6cXcwu11EWrgbDBrfVzahl009LIoaCqDzybo8wSgy51TJp6_GsruU2fCWdQgTLNMNqdyhyAk8TNRhPp990EgudIOeKRX8btrW3-rpmo8MVWTcM1-Qt7HYeZzBup8gevPLlO3izUYfwPZxwVq97DtLSBY3x4iEEM47TP3LB1aAqgqs75wXH2lxAGrnq3uPcysUHmE_Orn-ei66xgsiJkdbChzr1igvjm9CTSMdxbtAXeaQ9SlOkTulcYiZlnpB7lhRoyC8z5Dhlhm4WYbQP_bIq_QEETLkyFaJJtdPeRcfexCZ3OROTFPF4AN-XqNj7tn6GJd7BoFoC1a5BtQSqJVAtgUoHWgZ1AMMlkrYTroVdT4UBHK4ek1jwWkda-uqJ3om5MF1EGmcAJ6s_sPGN_x_Dx3-P4RPsKG6R0aS4DKFfPz75z-So1NkIembya9TNST5Ppn9uXgBLruKd
link.rule.ids 315,783,787,12777,21400,27936,27937,33385,33386,33756,33757,43612,43817
linkProvider ProQuest
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1JS8QwFH64gMtBXHFcK3iTaNOmrxFEEXEclxFBBW-hbVLw0o7OePDf-17bWbyIhx7ahhK-5q15-R7AITrF6bVcBKlUQuUJiRQGUlAs5IIgTaSttmK6j9h5VXdv0VuTcOs3ZZVDnVgpaltmnCM_YYmOyfeWeNH7ENw1indXmxYa0zCrQrLVfFK8fTPOsTAXDJvbWjOjklU3LYnoCwrkkc96-GGsyamWcc3GM7qXc3BEGoXCK11Nqj6fyOU7Vc7gsts9VnEkVIxcKRb-NmtjX3V-wCaH-VgnzFZ7GZYaf9O7rBfICky5YhUWJ1gI1-Cca3rtt5cU1qtMF0_Be-Is_SfTrXpl7j2_Wyc402Y90sdlM44rK_vr8Nq-frnqiKatgsgoHh0I56vEBUyLr31HAh1FmUaXZ6FyKHWe2EBlElMps5icszhHTV6ZJrcp1fQw98MNmCnKwm2CxwFXGvioE2WVs-Gp05HObMZhSYJ42oKzISqmV7NnGIo6GFRDoJoxqIZANQSqIVDpQsOgtmBniKRpRKtvxguhBQej1yQUvNORFK78ojER09KFpG9acD76AxPf-P8ctv6ewz7Md166D-bh9vF-GxYCbpZRFbvswMzg88vtkssySPeqdfkD05Xhog
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Steady+and+Transient+Properties+of+Side-Gated+Nano+Transistors&rft.jtitle=Applied+mechanics+and+materials&rft.au=Xu%2C+Kun+Yuan&rft.au=Wang%2C+Z+N&rft.au=Wang%2C+Y+N&rft.date=2013-12-01&rft.issn=1660-9336&rft.eissn=1662-7482&rft.volume=475-476&rft.issue=Sensors%2C+Measurement+and+Intelligent+Materials+II&rft.spage=1363&rft.epage=1367&rft_id=info:doi/10.4028%2Fwww.scientific.net%2FAMM.475-476.1363&rft.externalDBID=NO_FULL_TEXT
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=https%3A%2F%2Fwww.scientific.net%2FImage%2FTitleCover%2F2911%3Fwidth%3D600