Steady and Transient Properties of Side-Gated Nano-Transistors

• Published in: Applied Mechanics and Materials Vol. 475-476; no. Sensors, Measurement and Intelligent Materials II; pp. 1363 - 1367
• Main Authors: Wang, Y. N., Xu, Kun Yuan, Wang, Z.N.
• Format: Journal Article
• Language: English
• Published: Zurich Trans Tech Publications Ltd 01.12.2013
• Subjects: Channels; Computer simulation; Devices; Drains; Gates; Nanostructure; Oscillations; Steady state; Plasma; Planar; Monte Carlo; Non-Transistor; THz
• ISBN: 3037859717; 9783037859711
• ISSN: 1660-9336; 1662-7482; 1662-7482
• DOI: 10.4028/www.scientific.net/AMM.475-476.1363

Using a two-dimensional ensemble Monte Carlo (EMC) method, the steady and transient properties of side-gated nanotransistors with single gate and double gate are studied in detail. Simulation results show that the double-gated nanotransistor has more powerful controlling ability on the channel than the single-gated one. The transient processes of the drain current for the two devices are both about 3 ps, which imply that the working speed of the two devices may reach about 0.3 THz. The detail of transient processes for the double-gated nanotransistor is trivial. But for the single-gated nanotransistor, the drain current response shows obviously oscillating during approaching the next steady state. The phenomenon of drain current oscillations is also discussed.