Proton degradation of light-emitting diodes

Proton degradation is investigated for several types of light-emitting diodes with wavelengths in the near infrared region. Several basic light-emitting diode (LED) technologies are compared, including homojunction and double-heterojunction devices. Homojunction LEDs fabricated with amphoteric dopan...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 46; no. 6; pp. 1781 - 1789
Main Authors Johnston, A.H., Rax, B.G., Selva, L.E., Barnes, C.E.
Format Journal Article
LanguageEnglish
Published United States IEEE 01.12.1999
Subjects
Amphoterics
ANNEALING
ATOMIC DISPLACEMENTS
COMPARATIVE EVALUATIONS
Degradation
Electric potential
Epitaxial growth
Gallium arsenide
Homojunctions
Impurities
Infrared
INSTRUMENTATION
Laboratories
LIGHT EMITTING DIODES
Propulsion
PROTONS
RADIATION DOSES
Space technology
Temperature
Voltage
Wavelengths
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Summary:Proton degradation is investigated for several types of light-emitting diodes with wavelengths in the near infrared region. Several basic light-emitting diode (LED) technologies are compared, including homojunction and double-heterojunction devices. Homojunction LEDs fabricated with amphoteric dopants are far more sensitive to displacement damage than double-heterojunction LEDs, and are strongly affected by injection-enhanced annealing. Unit-to-unit variability remains an important issue for all LED technologies. For technologies, degradation of the forward voltage characteristics appears to be more significant than degradation of light output.
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ISSN:0018-9499
1558-1578
DOI:10.1109/23.819154