Preparation of ITO thin films applied in nanocrystalline silicon solar cells

• Published in: Vacuum Vol. 86; no. 3; pp. 290 - 294
• Main Authors: Erjing, Zhao, Weijia, Zhang, Jun, Lin, Dongjie, Yang, Jacques, Havugimana Jean, Jing, Zhang
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 08.10.2011
• Subjects: DC magnetron sputtering; Density; Indium tin oxide; ITO thin films; Nanocrystalline silicon; Nanocrystals; Photovoltaic cells; Silicon; Solar cells; Sputtering; Thin films; Solar cells; ITO thin films; Nanocrystalline silicon; DC magnetron sputtering
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2011.06.019

ITO thin films were prepared by changing the experimental parameters including gas flow ratio, sputtering pressure and sputtering time in DC magnetron sputtering equipment. The stable experimental parameters of Ar flow at 70 sccm, O 2 flow at 2.5 sccm ∼ 3.0 sccm, sputtering pressure around 0.5 Pa, and sputtering time of 80 s were obtained. Under these parameters, we had achieved the ITO thin films with low resistivity (<4 × 10 −4 Ω ∙ cm) and high average transmissivity (95.48%, 350 nm ∼ 1100 nm). These ITO thin films were applied in nanocrystalline silicon solar cells as top transparent conductive layer. The solar cell test result showed that the open circuit voltage (Voc) was up to 534.9 mV and the short circuit current density (Jsc) was 21.56 mA/cm 2. ► We prepared ITO films in DC magnetron sputtering equipment. ► Several important process parameters were optimized. ► We achieved ITO films with high average transmissivity and low resistivity. ► We applied ITO films in nanocrystalline silicon solar cells. ► 7.0% efficiency of the solar cell was achieved.