Ohmic contacts with palladium diffusion barrier on III–V semiconductors

Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by “electroless” deposition on semiconductor-substrates are reported. SIMS analysis...

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Published inVacuum Vol. 84; no. 10; pp. 1195 - 1198
Main Authors Galván-Arellano, M., Díaz-Reyes, J., Peña-Sierra, R.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 19.05.2010
Subjects
Contact resistance
Deposition
Diffusion barriers
Electroless deposition
GaAs
Gallium arsenide
III-V semiconductors
Ohmic contacts
Palladium
Secondary ion mass spectrometry
Semiconductors
SIMS
Transmission line method (TLM)
Diffusion barriers
Palladium
SIMS
Ohmic contacts
GaAs
Transmission line method (TLM)
III-V semiconductors
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Summary:Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by “electroless” deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2009.10.024