14xx-nm high brightness tapered diode lasers grown by solid-source MBE

We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 18; no. 5; pp. 655 - 657
Main Authors Kallenbach, S., Aidam, R., Losch, R., Kaufel, G., Kelemen, M.T., Mikulla, M., Weimann, G.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
14xx
Brightness
Devices
Diffraction
Diode lasers
Epitaxial growth
high brightness
InGaAsP
Lasers
Molecular beam epitaxial growth
Molecular beam epitaxy
Optical resonators
Optical waveguides
Photonics
Power generation
Power lasers
Pump lasers
Semiconductor lasers
solid-source molecular beam epitaxy (SSMBE)
Vapor phase epitaxy
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Summary:We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.
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ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.870124