Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices

We demonstrate correlated oxide memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO 3 , R = Sm, Nd) that undergo filling-controlled phase transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 39; no. 10; pp. 1500 - 1503
Main Authors Ramadoss, Koushik, Zuo, Fan, Sun, Yifei, Zhang, Zhen, Lin, Jianqiang, Bhaskar, Umesh, Shin, Sanghoon, Alam, Muhammad Ashraful, Guha, Supratik, Weinstein, Dana, Ramanathan, Shriram
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Computer memory
correlated oxide memory
Correlation
Doping
Electrodes
Electron beam lithography
Electronic devices
Memory devices
Nickel
Nonvolatile memory
Perovskites
Phase transitions
Protons
Random access memory
Resistance
resistive RAM
Switches
Switching
thin film devices
Online AccessGet full text

Cover

More Information
Summary:We demonstrate correlated oxide memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO 3 , R = Sm, Nd) that undergo filling-controlled phase transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are <inline-formula> <tex-math notation="LaTeX">\sim 300\times </tex-math></inline-formula> greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2865776