The properties of Co-doped copper nitride films deposited by reactive magnetron co-sputtering

Co-doped copper nitride films were successfully prepared on various substrates by reactive magnetron co-sputtering. We study the surface chemicals, structures, electrical resistivity, optical transmittance and magnetic properties of Co-doped Cu 3 N films. X-ray diffraction patterns show that the Co-...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 179; no. 1; pp. 63 - 76
Main Authors San, Zhi-Peng, Guo, Zhi-Wen, Gu, Guang-Rui, Wu, Bao-Jia
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 24.03.2017
Taylor & Francis Ltd
Subjects
Co-Cu
Copper
Diffraction
Diffraction patterns
Doped films
Electrical resistivity
Magnetic films
Magnetic properties
Magnetron co-sputtering
Magnetron sputtering
N films
Optical properties
structures
Substrates
X-ray diffraction
X-rays
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Summary:Co-doped copper nitride films were successfully prepared on various substrates by reactive magnetron co-sputtering. We study the surface chemicals, structures, electrical resistivity, optical transmittance and magnetic properties of Co-doped Cu 3 N films. X-ray diffraction patterns show that the Co-doped films more readily exhibit diffraction peaks on different orientations when deposited on ITO glass substrates. The resistivity of the films significantly decreases from 5730 Ω·cm to 225 Ω·cm with increasing content of Co. Vibrating sample magnetometer tests show that magnetic films were obtained via Co doping.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2017.1330620