In situ RHEED control of self-organized Ge quantum dots

• Published in: Thin solid films Vol. 380; no. 1; pp. 158 - 163
• Main Authors: Nikiforov, A.I., Cherepanov, V.A., Pchelyakov, O.P., Dvurechenskii, A.V., Yakimov, A.I.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 22.12.2000
• Subjects: GeSi; MBE; Quantum dot; RHEED; MBE; Quantum dot; RHEED; GeSi
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(00)01493-0

In situ registration of high-energy electron diffraction patterns was used for constructing the diagram of structural and morphological states of the Ge film on the Si(100) surface. The following regions identified in the diagram: two-dimensional (2D)-growth, ‘hut’- and ‘dome’-clusters, ‘dome’-clusters with misfit dislocations at the interface. Variations in the lattice constants of the Ge film during the MBE growth on the Si(100) surface were determined. An increase in the lattice constant at the (100) surface was attributed to the elastic deformation at the stage of 2D growth and formation of ‘hut’-clusters and to the plastic relaxation for the ‘dome’-clusters. As a result, epitaxial silicon structures with germanium quantum dots of 15 nm base size at the density of 3×10 11 cm −2 were synthesized. The total electron structure of the hole spectrum of Ge quantum dots in Si was established.