Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy

Hole energy spectrum in Ge/Si(001) heterostructures grown by molecular-beam epitaxy are studied using capacitance spectroscopy at a temperature range of 4.2–300 K. We find that the formation of Ge islands as the effective film thickness exceeds six monolayers leads to the appearance of the zero-dime...

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Bibliographic Details
Published inThin solid films Vol. 336; no. 1; pp. 332 - 335
Main Authors Yakimov, A.I, Dvurechenskii, A.V, Nikiforov, A.I, Pchelyakov, O.P
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.12.1998
Subjects
Capacitance spectroscopy
Germanium
Quantum dots
Silicon
Germanium
Silicon
Quantum dots
Capacitance spectroscopy
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Summary:Hole energy spectrum in Ge/Si(001) heterostructures grown by molecular-beam epitaxy are studied using capacitance spectroscopy at a temperature range of 4.2–300 K. We find that the formation of Ge islands as the effective film thickness exceeds six monolayers leads to the appearance of the zero-dimensional hole states associated with Ge quantum dots. Analysis of the capacitance–voltage characteristics of structures containing the quantum-dot ‘atoms’ and the quantum-dot ‘molecules’ reveals the Coulomb charging effect.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01250-4