Reliable rectifiers and photovoltaic converters for high levels of ionizing irradiation

Nonlinear charge carrier transport has been investigated for the metal-intrinsic semiconductor-metal (M-i-M) and heterojunction of two intrinsic semiconductor (i-i) structures. It is shown that if the film thickness is of the order of the Debye screening radius, the current—voltage characteristics o...

Full description

Saved in:
Bibliographic Details
Published inMicroelectronics Vol. 29; no. 8; pp. 535 - 542
Main Authors Volovichev, I.N., Gurevichb, Yu.G., Koshkinb, V.M.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.08.1998
Subjects
In2Te3
Intrinsic semiconductors
Radiation stability
Radiation stability
Intrinsic semiconductors
In2Te3
Online AccessGet full text

Cover

More Information
Summary:Nonlinear charge carrier transport has been investigated for the metal-intrinsic semiconductor-metal (M-i-M) and heterojunction of two intrinsic semiconductor (i-i) structures. It is shown that if the film thickness is of the order of the Debye screening radius, the current—voltage characteristics of these structures become comparable to those observed for the usual junctions at the base of doped semiconductors. The possibility of solid-state electronic devices at the base of M-i-M and i-i thin film structures is demonstrated. For intrinsic semiconductors, using semiconductors of the In2Te3 type, which cannot be effectively doped, but possess extremely high radiation stability, permits one to create a family of electronic devices for application under conditions of very high levels of ionizing irradiation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/S0026-2692(98)00005-6