Fabrication and characterisation of SiGe based in-plane-gate transistors
We present an in-situ technology for fabrication of barrier structures in modulation-doped SiSiGe in-plane-gate (IPG) transistors. A special multilayer-resist system is developed for pattern transfer by electron-beam lithography (EBL) and anisotropic SF6O2 dry etching. Barriers are realized by etch-...
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Published in | Microelectronic engineering Vol. 35; no. 1-4; pp. 301 - 304 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.02.1997
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Online Access | Get full text |
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Summary: | We present an in-situ technology for fabrication of barrier structures in modulation-doped SiSiGe in-plane-gate (IPG) transistors. A special multilayer-resist system is developed for pattern transfer by electron-beam lithography (EBL) and anisotropic SF6O2 dry etching. Barriers are realized by etch-trenches cutting the two dimensional electron gas (2DEG). The trenches are filled up with a low temperature remote plasma enhanced chemical vapour deposition (RPECVD) of silicondioxide (SiO2). Dry-etching and passivation are done in-situ to avoid contamination. IPG transistors with different geometric dimensions have been fabricated and electrically characterised. Transistor operation is demonstrated up to T=77 K. The breakdown voltage and the depletion length of the devices are estimated. The obtained data indicate the advantage of the presented in-situ technology in comparison to other fabrication techniques. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/S0167-9317(96)00132-3 |