Proposal on Temperature-Insensitive Semiconductor Lasers

We propose temperature-insensitive semiconductor lasers which use compensation layers with negative refractive index temperature coefficients. It is theoretically shown that the maximum wavelength shift is -1.06 Å with temperature change within a range of 100 K. It is also expected that the characte...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 38; no. 8R; p. 4764
Main Authors Takahiro Numai, Takahiro Numai, Natsuhiko Mizutani, Natsuhiko Mizutani, Jun Nitta, Jun Nitta
Format Journal Article
LanguageEnglish
Published 01.08.1999
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Summary:We propose temperature-insensitive semiconductor lasers which use compensation layers with negative refractive index temperature coefficients. It is theoretically shown that the maximum wavelength shift is -1.06 Å with temperature change within a range of 100 K. It is also expected that the characteristic temperature is high because the band gap of the compensation layer increases with temperature.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.4764