Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

• Published in: IEEE electron device letters Vol. 43; no. 6; pp. 958 - 961
• Main Authors: Shin, Wonjun, Bae, Jong-Ho, Kwon, Dongseok, Koo, Ryun-Han, Park, Byung-Gook, Kwon, Daewoong, Lee, Jong-Ho
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f noise; 1/f noise; Ferroelectric materials; ferroelectric tunnel junction (FTJ); Ferroelectricity; length; LF noise; Low-frequency noise; low-frequency noise (LFN); Noise measurement; Random access memory; Scaling; Shot noise; Silicon; Silicon dioxide; Tin; Tunnel junctions; Tunneling; width
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2022.3168797

We investigate the effects of length (<inline-formula> <tex-math notation="LaTeX">{L} </tex-math></inline-formula>) and width (<inline-formula> <tex-math notation="LaTeX">{W} </tex-math></inline-formula>) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semicondu- ctor (TiN/HfZrO 2 /SiO 2 /<inline-formula> <tex-math notation="LaTeX">{n}^{+} </tex-math></inline-formula> Si). In the high-resistance state, 1/<inline-formula> <tex-math notation="LaTeX">{f} </tex-math></inline-formula> noise increases proportionally to 1/<inline-formula> <tex-math notation="LaTeX">{W}^{\alpha }{L}^{\beta } </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">\alpha \cong ~1 </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">\beta >1 </tex-math></inline-formula>), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/<inline-formula> <tex-math notation="LaTeX">{f} </tex-math></inline-formula> noise of the FTJ shows a more sensitive dependence on <inline-formula> <tex-math notation="LaTeX">{L} </tex-math></inline-formula> scaling than <inline-formula> <tex-math notation="LaTeX">{W} </tex-math></inline-formula> scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.