An Experimental Demonstration of 160-Gbit/s PAM-4 Using a Silicon Micro-Ring Modulator

Silicon photonics has been regarded as a promising technology for future small-footprint, low-cost and low-power 400-Gbit/s datacenter interconnects (DCIs). In this work, for the first time, we report an experimental demonstration of a single-wavelength, single-polarization 160-Gbit/s four-level pul...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 32; no. 2; pp. 125 - 128
Main Authors Tong, Yeyu, Hu, Zhouyi, Wu, Xinru, Liu, Songtao, Chang, Lin, Netherton, Andrew, Chan, Chun-Kit, Bowers, John E., Tsang, Hon Ki
Format Journal Article
LanguageEnglish
Published New York IEEE 15.01.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Adaptive optics
Bandwidth
Bit error rate
Datacenter interconnects
Depletion
Error analysis
Error correction
micro-ring modulator
Modulation
Optical attenuators
Optical transmitters
Photonics
Pulse amplitude modulation
short-reach communication
Silicon
silicon photonics
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Summary:Silicon photonics has been regarded as a promising technology for future small-footprint, low-cost and low-power 400-Gbit/s datacenter interconnects (DCIs). In this work, for the first time, we report an experimental demonstration of a single-wavelength, single-polarization 160-Gbit/s four-level pulse-amplitude modulation (PAM-4) employing a single integrated silicon carrier-depletion micro-ring modulator (MRM). The measured bit-error rates (BERs) for the back-to-back (BTB) and after 1-km standard single-mode fiber (SSMF) transmission are 1.36E-3 and 2.12E-3, respectively, all below the hard-decision forward error correction (HD-FEC) coding limit with 7% overhead. A data rate of up to 170 Gbit/s with a BER lower than the HD-FEC limit is demonstrated for the BTB transmission.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2019.2960238