Optimal structure for resonant THz detection of plasmons-polaritons in the 2D quantum wells

• Published in: 2012 7th European Microwave Integrated Circuit Conference Vol. 109; no. 4; pp. 80 - 83
• Main Authors: Cao, L., Grimault-Jacquin, A.-S., Aniel, F., Poisson, M. -A., Delage, S., Sagnes, I., Le Gratiet, L.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Berlin/Heidelberg IEEE 01.12.2012; Springer-Verlag; Springer
• Subjects: Absorption; Aluminum gallium nitride; Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors; Characterization and Evaluation of Materials; Condensed Matter Physics; Exact sciences and technology; Gallium nitride; Gratings; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Machines; Manufacturing; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Plasma temperature; plasmon-polariton; Processes; Silicon germanium; Surfaces and Interfaces; Temperature measurement; Terahertz detctor; Thin Films; Resonance Tunability; Quantum Well Layer; Plasmon Frequency; Quantum Well; High Electron Concentration; Gallium Nitrides; Radiation detectors; Ge-Si alloys; Ternary compounds; Quantum wells; Two dimensional structure; Binary compounds; Polaritons; Two-dimensional electron gas; Gallium Arsenides; Interfaces; Aluminium Nitrides; Aluminium Arsenides; THz range; Fermi level; Ambient temperature; Plasmons; Silicon; Absorption spectra; Heterostructures; III-V semiconductors
• ISBN: 9781467323024; 1467323020
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-012-7371-y

We investigate terahertz plasmon-polariton (PP) resonances for hetero-structures (AlGaN/GaN, SiGe/Si/SiGe, AlGaAs/GaAs and InAlN/GaN) with grating coupler in order to find the optimal structure. We show a modeling work devoted to a parametric study (influence of geometry, temperature...) that the resonances are tunable in frequency allowing a control of the terahertz detection. The modeling shows that AlGaN/GaN and InAlN/GaN heterostructures present the highest PP resonances at 300K. Then we compare modeling with room temperature and cryogenic temperature FTIR measurements on group III-N heterostructures which are indeed the most promising.