Electric and photoelectric properties of semi-insulating crystals of CdTe:Pb

CdTe:Pb monocrystals were grown by the Bridgemann method. The impurity concentration in the melt was in the ranges of N Pb 0=10 18–5×10 19 cm −3. From the electric measurements it turns out that the lead creates deep levels with E V +0.43 eV in CdTe. At the mentioned concentrations, N Pb 0 the hole...

Full description

Saved in:
Bibliographic Details
Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 99; no. 1; pp. 584 - 587
Main Authors Gorley, Peter N., Vorobiev, Yuri V., Makhniy, Victor P., Parfenyuk, Orest, Ilashchuk, Mariya, González-Hernández, Jesús, Horley, Paul P.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.05.2003
Subjects
Cadmium telluride
Defects
Photoconductivity
Photoelectric measurements
Photorefraction
Photoelectric measurements
Cadmium telluride
Photorefraction
Photoconductivity
Defects
Online AccessGet full text

Cover

More Information
Summary:CdTe:Pb monocrystals were grown by the Bridgemann method. The impurity concentration in the melt was in the ranges of N Pb 0=10 18–5×10 19 cm −3. From the electric measurements it turns out that the lead creates deep levels with E V +0.43 eV in CdTe. At the mentioned concentrations, N Pb 0 the hole concentration is (6.11×10 9–1.98×10 13) cm −3. From the photoelectric measurements it follows that recombination processes in CdTe:Pb could be explained by the presence of the defects with significantly different trapping cross-sections of electrons and holes ( S pr≫ S nr). The trapping asymmetry of the mentioned centers was defined to be S pr/ S nr>10 6.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(02)00540-8