Reliability of metamorphic HEMTs on GaAs substrates
Metamorphic HEMT (MHEMT) technology enables the growth of high indium content channels on GaAs substrates, giving them the performance of InP HEMTs. MHEMT growth techniques use a graded alloy composition buffer layer structure, permitting channel indium contents exceeding 25% without strain. Potenti...
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Published in | Microelectronics and reliability Vol. 42; no. 7; pp. 997 - 1002 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.07.2002
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Online Access | Get full text |
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Summary: | Metamorphic HEMT (MHEMT) technology enables the growth of high indium content channels on GaAs substrates, giving them the performance of InP HEMTs. MHEMT growth techniques use a graded alloy composition buffer layer structure, permitting channel indium contents exceeding 25% without strain. Potential applications include 40 Gb/s fiber optic receivers as well as LNAs for local multipoint distribution systems and satellite communications. Many such applications place stringent requirements on reliability with Belcore standards requiring 10
6 h median time to failure (MTTF) at 125 °C for power devices. Satellite applications require a LNA projected failure-free service of 15–30 years, implying approximately 10
7 h MTTF, at 85 °C. Naturally, one will ask “Is MHEMT technology reliable?” From the results of our ongoing work, we show that MHEMT reliability is similar to that of InP HEMTs with ∼10
6 h MTTF at 125 °C. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0026-2714 1872-941X |
DOI: | 10.1016/S0026-2714(02)00063-X |