Atmospheric degradation, mechanism and kinetics of ethyl vinyl ketone (CH2=CHCOCH2CH3) initiated by Cl atom: an insight from DFT study
The mechanism and kinetics of the H-abstractions of ethylvinylketone (CH 2 =CHCOCH 2 CH 3 ) with Cl atom have been carried out using density functional theory (DFT). The electronic structures and frequencies of reaction species are carried out at M06-2X/6-31+G(d,p) level. The energy calculation is p...
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Published in | Molecular physics Vol. 120; no. 13 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Abingdon
Taylor & Francis
03.07.2022
Taylor & Francis Ltd |
Subjects | |
Online Access | Get full text |
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Summary: | The mechanism and kinetics of the H-abstractions of ethylvinylketone (CH
2
=CHCOCH
2
CH
3
) with Cl atom have been carried out using density functional theory (DFT). The electronic structures and frequencies of reaction species are carried out at M06-2X/6-31+G(d,p) level. The energy calculation is performed for optimised species at the same functionality but using a 6-311++G(d,p) basis set. We characterised transition states (TSs) in each H-abstraction channel and explored reaction species along with TS involved in CH
2
=CHCOCH
2
CH
3
+Cl reaction on the potential energy diagram. Among the various H-abstraction channels, H-abstraction from the methylene group (-CH
2
-) of CH
2
=CHCOCH
2
CH
3
is found to be a more dominant reaction channel which is further confirmed by thermochemical analysis. The rate constants of all H-abstraction reaction channels and overall rate constant are calculated using canonical transition state theory (TST) within the temperature range of 200-400 K. The value of the overall rate constant at 298.15 K and 1atm pressure is found to be 0.94 × 10
−10
cm
3
mol
−1
s
−1
, which is in close with the experimental reported rate constant value, i.e. (2.91 ± 1.10) × 10
−10
cm
3
mol
−1
s
−1
. The percentage branching ratios of each H-abstraction reaction channel, as well as the lifetime of the titled compound, are also reported herein. |
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ISSN: | 0026-8976 1362-3028 |
DOI: | 10.1080/00268976.2022.2100835 |