Effect of elevated temperature irradiation on bipolar devices for space application

The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradation at any dose rate, temperature and total dose num...

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Bibliographic Details
Published inRadiation effects and defects in solids Vol. 174; no. 3-4; pp. 320 - 328
Main Authors Pershenkov, Viacheslav S., Telets, Vitaliy A., Bakerenkov, Alexander S., Rodin, Alexander S., Felitsyn, Vladislav A., Belyakov, Vladimir V.
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis 03.04.2019
Taylor & Francis Ltd
Subjects
Computer simulation
Conversion
Degradation
Elevated temperature irradiation
enhanced low-dose-rate sensitivity (ELDRS)
High temperature
Irradiation
Radiation
Radiation dosage
Radiation effects
Sensitivity enhancement
single temperature four-step radiation approach (STFRA)
temperature-switching approach (TSA)
Test procedures
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Summary:The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradation at any dose rate, temperature and total dose numerically. The possibility of application of the conversion model for the numerical estimation of radiation-induced increase of LM111 input current under low dose rate radiation impact was demonstrated experimentally. A test method using four-stage elevated single temperature irradiation was proposed. The ability of temperature-switching approach for simulation of enhanced low-dose-rate sensitivity was estimated and discussed.
ISSN:1042-0150
1029-4953
DOI:10.1080/10420150.2018.1564921