A Lateral MOS-Capacitor-Enabled ITO Mach-Zehnder Modulator for Beam Steering

Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 6...

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Bibliographic Details
Published inJournal of lightwave technology Vol. 38; no. 2; pp. 282 - 290
Main Authors Amin, Rubab, Maiti, Rishi, George, Jonathan K., Ma, Xiaoxuan, Ma, Zhizhen, Dalir, Hamed, Miscuglio, Mario, Sorger, Volker J.
Format Journal Article
LanguageEnglish
Published New York IEEE 15.01.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 V . μm). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field-overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an end-fire silicon photonics optical phased array (OPA) with a half-wavelength pitch within the waveguides with anticipated performance, including narrow main beam lobe (<; 3°) and >10 dB suppression of the side lobes, while electrostatically steering the emission profile up to ±80°, and if further engineered, can lead not only towards nanosecond-fast beam steering capabilities in LiDAR systems but also in holographic display, free-space optical communications, and optical switches.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2019.2956719