A Lateral MOS-Capacitor-Enabled ITO Mach-Zehnder Modulator for Beam Steering
Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 6...
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Published in | Journal of lightwave technology Vol. 38; no. 2; pp. 282 - 290 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
15.01.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 V . μm). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field-overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an end-fire silicon photonics optical phased array (OPA) with a half-wavelength pitch within the waveguides with anticipated performance, including narrow main beam lobe (<; 3°) and >10 dB suppression of the side lobes, while electrostatically steering the emission profile up to ±80°, and if further engineered, can lead not only towards nanosecond-fast beam steering capabilities in LiDAR systems but also in holographic display, free-space optical communications, and optical switches. |
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ISSN: | 0733-8724 1558-2213 |
DOI: | 10.1109/JLT.2019.2956719 |