Wave-ordered structures formed on SOI wafers by reactive ion beams

The dependence of wave-ordered structure (WOS) formation during low-energy ion bombardment of silicon upon the main experimental parameters (ion type, (e.g., N 2 + or O 2 +), ion energy, incidence angle and wafer temperature) and WOS formation dynamics have been studied. WOS in N 2 +/Si system are u...

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Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 147; no. 1; pp. 310 - 315
Main Authors Smirnov, V.K., Kibalov, D.S., Krivelevich, S.A., Lepshin, P.A., Potapov, E.V., Yankov, R.A., Skorupa, W., Makarov, V.V., Danilin, A.B.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1999
Subjects
Bombardment
Nanostructures
Nitrogen
Silicon
Surface topography
Bombardment
Silicon
Surface topography
Nanostructures
Nitrogen
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Summary:The dependence of wave-ordered structure (WOS) formation during low-energy ion bombardment of silicon upon the main experimental parameters (ion type, (e.g., N 2 + or O 2 +), ion energy, incidence angle and wafer temperature) and WOS formation dynamics have been studied. WOS in N 2 +/Si system are uniform, stable and their wavelengths are on the order of nanometers. The geometry and internal structure of individual waves in the N 2 +/Si system have been determined. We show that WOS formation on SOI using ion beams can be controlled.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(98)00610-7