Investigation of acceptor centers in semiconductors by means of negative muons

The behavior (in the temperature range of 4– 300 K ) of the polarization of the negative muon spin for more than 20 n- and p-type crystalline silicon samples with impurity concentrations from ∼10 12 to ∼10 20 cm −3 made it possible (a) to infer the mechanisms for the relaxation of the magnetic momen...

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Published inPhysica. B, Condensed matter Vol. 326; no. 1; pp. 97 - 104
Main Authors Mamedov, T.N., Herlach, D., Gorelkin, V.N., Stoikov, A.V., Zimmermann, U.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2003
Subjects
Impurities
Negative muon
Semiconductors
Semiconductors
Impurities
Negative muon
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Summary:The behavior (in the temperature range of 4– 300 K ) of the polarization of the negative muon spin for more than 20 n- and p-type crystalline silicon samples with impurity concentrations from ∼10 12 to ∼10 20 cm −3 made it possible (a) to infer the mechanisms for the relaxation of the magnetic moment of the Al acceptor in Si at different impurity concentrations, including the concentration region above the critical concentration corresponding to the Mott (insulator-to-metal) transition; (b) to find the value of the hyperfine interaction constant for the acceptor and to estimate the density of the hole wave function on the nucleus of the impurity atom.
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ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(02)01583-1