Carborane beam from ITEP Bernas ion source for semiconductor implanters

A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Insti...

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Published inReview of scientific instruments Vol. 81; no. 2; p. 02B901
Main Authors Seleznev, D, Kropachev, G, Kozlov, A, Kuibeda, R, Koshelev, V, Kulevoy, T, Hershcovitch, A, Jonson, B, Poole, J, Alexeyenko, O, Gurkova, E, Oks, E, Gushenets, V, Polozov, S, Masunov, E
Format Journal Article
LanguageEnglish
Published United States 01.02.2010
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Summary:A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C(2)B(10)H(12)) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.
ISSN:1089-7623
DOI:10.1063/1.3258422