Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 147; no. 1; pp. 96 - 100
• Main Authors: Kögler, R., Yankov, R.A., Posselt, M., Danilin, A.B., Skorupa, W.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 1999
• Subjects: Defects; Gettering; Ion implantation; 61.72.Yx; 61.72.Ji; Ion implantation; Cu; Si; Gettering; 61.72.Tt; Defects
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(98)00534-5

Damage has been observed in MeV-ion-implanted Si away from the maximum of the nuclear energy deposition profile, mainly around the half of the projected ion range, R P/2. Cu gettering has been used for the detection of irradiation defects which are formed during annealing at temperatures between 700°C and 1000°C. This damage is primarily created by the implanted ions on their trajectory and consists of intrinsic defects remaining so small that they have not yet been resolved. These defects undergo a defect evolution during annealing which results in a decrease of the width of the damage layer with increasing temperature and prolonged time of the annealing.