Electrical and optical properties of boron doped CdS thin films prepared by chemical bath deposition

Boron doped CdS films were prepared by chemical bath deposition, which is a low-cost and large-area technique and appears to be well-suited for the manufacture of thin film solar cells, using boric acid (H 3BO 3) as dopant source, and their properties were investigated as a function of doping concen...

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Published inThin solid films Vol. 431; no. Complete; pp. 344 - 348
Main Authors Lee, Jae-Hyeong, Yi, Jun-Sin, Yang, Kea-Joon, Park, Joon-Hoon, Oh, Ryum-Duk
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2003
Subjects
Boron
Cadmium sulphide
Cadmium telluride
Solar cells
Cadmium telluride
Solar cells
Boron
Cadmium sulphide
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Summary:Boron doped CdS films were prepared by chemical bath deposition, which is a low-cost and large-area technique and appears to be well-suited for the manufacture of thin film solar cells, using boric acid (H 3BO 3) as dopant source, and their properties were investigated as a function of doping concentration. In addition, effects of the boron doping of the CdS films on the characteristics of CdS/CdTe solar cells were investigated. As the boron doping concentration increased, the resistivity of CdS films rapidly decreased and exhibited the lowest resistivity of 2 Ω cm at 0.01 of H 3BO 3/CdAc 2 mole ratio. Boron doping into CdS films improved the optical transmittance in the visible region of light and increased the optical band gap. The photovoltaic characteristics of CdS/CdTe solar cells using boron doped CdS film as the window layer were improved due to the increase of the electrical conductivity and the optical band gap of CdS films.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(03)00153-6