Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage nor-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation Node

• Published in: IEEE electron device letters Vol. 32; no. 6; pp. 734 - 736
• Main Authors: Ou, T F, Tzeng, W C, Tsai, C H, Lee, G D, Ku, S H, Liu, C H, Liu, K W, Zous, N K, Huang, S W, Chen, M S, Lu, W P, Chen, K C, Chih-Yuan Lu
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Arrays; Channel hot electron injection; Channels; Charge distribution; Current measurement; Design. Technologies. Operation analysis. Testing; Disturbances; Dosage; Drains; Electronics; Exact sciences and technology; Flash memory; Gates; Integrated circuits; Integrated circuits by function (including memories and processors); Ionization; Junction dosage; Junctions; Logic gates; Magnetic and optical mass memories; Noise; program speed; random telegraph noise (RTN); second-bit effect (2nd bit effect); secondary impact ionization; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Storage and reproduction of information; X-disturbance; Performance evaluation; Charge storage; Memory devices; secondary impact ionization; random telegraph noise (RTN); Random telegraph noise; X-disturbance; Optimization; program speed; second-bit effect (2nd bit effect); Non volatile memory; Junction dosage; Integrated circuit; Leakage current; Impact ionization; Miniaturization
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2134064

A variety of cell performances, such as program speed, second-bit effect, program disturbance along the channel direction (X-disturbance), and random telegraph noise (RTN), are investigated extensively under different junction dosages in a virtual-ground charge-trap nor array of 45-nm technology. Junction profiles and the location of programmed charges are compared by means of a gate-induced drain leakage scheme. Experiments reveal that the source/drain dosage beneath gate edges affects the program speed, injected charge distribution, X-disturbance induced by secondary impact ionization, and RTN performance.