Modelling and fabrication of Geiger mode avalanche photodiodes

As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, single pixel devices have been made. A CMOS compatible technology is used to allow the future integration of pixels in an array with readout electronics. A model for afterpulsing is presented that relates the after...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 45; no. 3; pp. 715 - 719
Main Authors Kindt, W.J., Van Zeijl, H.W.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1998
Subjects
Avalanche photodiodes
Cathodes
CMOS technology
Diodes
Electric breakdown
Electron traps
Extraterrestrial measurements
Fabrication
Optical sensors
Readout electronics
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Summary:As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, single pixel devices have been made. A CMOS compatible technology is used to allow the future integration of pixels in an array with readout electronics. A model for afterpulsing is presented that relates the afterpulsing probability to the concentration and capture cross section of the traps in the depletion layer. The bias voltage and temperature dependence of the dark count rate is explained by a trap assisted tunneling model. Measured results on fabricated devices are compared with theory.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.682621