Accurate modeling of electro-thermal effects in silicon devices

Due to the ever-increasing integration scale, power dissipation and device heating is now becoming of significant concern even for VLSI device designers. Therefore, suitable simulation tools must be generated which handle the non-isothermal regime in three dimensions. This paper summarizes the deriv...

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Published inESSDERC '92: 22nd European Solid State Device Research conference Vol. 19; no. 1; pp. 769 - 772
Main Authors Pierantoni, A., Ciampolini, P., Baccarani, G.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Elsevier B.V 1992
IEEE
Subjects
Charge carrier processes
Equations
Heating
Lattices
Microelectronics
Power dissipation
Power engineering and energy
Semiconductor devices
Silicon devices
Thermodynamics
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Summary:Due to the ever-increasing integration scale, power dissipation and device heating is now becoming of significant concern even for VLSI device designers. Therefore, suitable simulation tools must be generated which handle the non-isothermal regime in three dimensions. This paper summarizes the derivation of a new heat-transport model which self-consistently accounts for heating effects. Results of some 3D, electro-thermal device simulations are finally shown.
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ISBN:9780444894786
0444894780
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90541-X