Low temperature investigation on dielectric properties of carbon doped copper oxide

• Published in: Ferroelectrics. Letters section Vol. 48; no. 1-3; pp. 46 - 55
• Main Authors: Bitra, Hema Chandra Rao, Rao, A. Venkateswara, Babu, K. Suresh, Rao, G. Narsinga
• Format: Journal Article
• Language: English
• Published: Philadelphia Taylor & Francis 30.04.2021; Taylor & Francis Ltd
• Subjects: AC conductivity; activation energy; Carbon; cole-cole plot; Conductivity; Copper; Copper oxide; Copper oxides; Dielectric properties; Electrical properties; Energy value; Frequency ranges; Grain boundaries; Low temperature; permittivity; Quantum mechanics; Temperature dependence; X-ray diffraction
• ISSN: 0731-5171; 1563-5228
• DOI: 10.1080/07315171.2021.1923120

Carbon-doped copper oxide (CuO) 1 -x C x (x = 0, 0.05 and 0.1) samples were synthesized by solid state reaction method, and sintered at 850 °C for 12 h. An X-ray diffraction (XRD) result shows that the structure of the samples was monoclinic. Dielectric studies were carried for these samples in the temperature range 80 K − 300 K between the frequency range 20 Hz − 1 MHz via impedance analyzer. The permittivity and tangent loss values of the doped samples increase with increasing doping concentration. In AC conductivity study, the conductivity mechanism of the 0% and 10% carbon doped samples follows correlated barrier hopping (CBH) model and 5% carbon doped sample follows quantum mechanical tunnelling (QMT) model. The temperature-dependent conductivity curve seems to obey the Arrhenius behavior. The activation energy values have been calculated from the frequency-dependent conductivity curves. The cole-cole plot shows the formation of grain and grain boundary in the samples.