Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces
Oxidized (001) surfaces of both GaAs crystals and Ga 0.7Al 0.3As alloys are found to exhibit characteristic reflectance anisotropy (RA) spectra in the range 1.5–5.5 eV. A microstructure model of GaAs/oxide interface is proposed to treat the observed spectra within a quasi-microscopic theory of refle...
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Published in | Solid state communications Vol. 119; no. 12; pp. 647 - 651 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
05.09.2001
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Subjects | |
Online Access | Get full text |
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Summary: | Oxidized (001) surfaces of both GaAs crystals and Ga
0.7Al
0.3As alloys are found to exhibit characteristic reflectance anisotropy (RA) spectra in the range 1.5–5.5
eV. A microstructure model of GaAs/oxide interface is proposed to treat the observed spectra within a quasi-microscopic theory of reflectance anisotropy developed for multilayer dielectric arrangements. Quantitative agreement between measured and calculated RA spectra shows the principal spectral features to be related to local-field effects at the GaAs/oxide interface, which is typical of A
3B
5 compounds. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/S0038-1098(01)00310-6 |