Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces

Oxidized (001) surfaces of both GaAs crystals and Ga 0.7Al 0.3As alloys are found to exhibit characteristic reflectance anisotropy (RA) spectra in the range 1.5–5.5 eV. A microstructure model of GaAs/oxide interface is proposed to treat the observed spectra within a quasi-microscopic theory of refle...

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Bibliographic Details
Published inSolid state communications Vol. 119; no. 12; pp. 647 - 651
Main Authors Berkovits, V.L., Gordeeva, A.B., Kosobukin, V.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 05.09.2001
Subjects
A. Semiconductors
A. Surfaces and interfaces
C. Crystal structure and symmetry
D. Optical properties
C. Crystal structure and symmetry
A. Surfaces and interfaces
D. Optical properties
73.90.+f
A. Semiconductors
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Summary:Oxidized (001) surfaces of both GaAs crystals and Ga 0.7Al 0.3As alloys are found to exhibit characteristic reflectance anisotropy (RA) spectra in the range 1.5–5.5 eV. A microstructure model of GaAs/oxide interface is proposed to treat the observed spectra within a quasi-microscopic theory of reflectance anisotropy developed for multilayer dielectric arrangements. Quantitative agreement between measured and calculated RA spectra shows the principal spectral features to be related to local-field effects at the GaAs/oxide interface, which is typical of A 3B 5 compounds.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(01)00310-6