Phonons in Si/Ge superlattices: Theory and experiment

The dispersion of longitudinal phonons in Si/Ge superlattices has been calculated using a linear chain model involving first- and second-neighbour interactions. The results of the calculations are compared with the results of Raman experiments on short-period Si/Ge superlattices. The parameters of t...

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Bibliographic Details
Published inThin solid films Vol. 183; no. 1; pp. 105 - 110
Main Authors Montie, E.A., van de Walle, G.F.A., Gravesteijn, D.J., van Gorkum, A.A., Teesselink, W.J.O.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.12.1989
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Summary:The dispersion of longitudinal phonons in Si/Ge superlattices has been calculated using a linear chain model involving first- and second-neighbour interactions. The results of the calculations are compared with the results of Raman experiments on short-period Si/Ge superlattices. The parameters of the model are based on experimental data for bulk silicon and germanium, and on the superlattice parameters determined by X-ray diffraction and Rutherford backscattering spectroscopy. Good agreement between theory and experiment is obtained. The “SiGe” mode observed experimentally is shown to originate from imperfect interfaces.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(89)90435-5