An analytical MOSFET breakdown model including self-heating effect

This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFET devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200°C. It is found that the device self-heating effect is suppressed when ambient temperature is increas...

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Bibliographic Details
Published inSolid-state electronics Vol. 44; no. 1; pp. 125 - 131
Main Authors Ho, C.S., Liou, J.J., Chen, Frank
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2000
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Summary:This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFET devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200°C. It is found that the device self-heating effect is suppressed when ambient temperature is increased. In addition, our results suggest that the conventional MOSFET breakdown model without considering the self-heating effect can overestimate the breakdown characteristics for the short-channel devices.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(99)00198-7