Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

• Published in: Applied physics express Vol. 8; no. 3; pp. 36503 - 36506
• Main Authors: Mori, Takahiro, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Fukuda, Koichi, Miyata, Noriyuki, Yasuda, Tetsuji, Masahara, Meishoku, Ota, Hiroyuki
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.03.2015

A tunneling-current enhancement technology for Si-based tunnel field-effect transistors (TFETs) utilizing an Al-N isoelectronic trap (IET) has been proposed recently. In this study, we investigate hot implantation as a doping technique for Al-N isoelectronic impurity. Hot implantation reduces the da...