Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

A tunneling-current enhancement technology for Si-based tunnel field-effect transistors (TFETs) utilizing an Al-N isoelectronic trap (IET) has been proposed recently. In this study, we investigate hot implantation as a doping technique for Al-N isoelectronic impurity. Hot implantation reduces the da...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 8; no. 3; pp. 36503 - 36506
Main Authors Mori, Takahiro, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Fukuda, Koichi, Miyata, Noriyuki, Yasuda, Tetsuji, Masahara, Meishoku, Ota, Hiroyuki
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2015
Online AccessGet full text

Cover

More Information
Summary:A tunneling-current enhancement technology for Si-based tunnel field-effect transistors (TFETs) utilizing an Al-N isoelectronic trap (IET) has been proposed recently. In this study, we investigate hot implantation as a doping technique for Al-N isoelectronic impurity. Hot implantation reduces the damage induced by Al and N implantation processes, resulting in performance improvement of IET-assisted TFETs, e.g., a 12-fold enhancement in the driving current at an operation voltage of 0.5 V and an approximately one-third reduction in the subthreshold slope. By hot implantation, we can achieve a higher driving current in Si-based TFETs using the IET technology.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.8.036503