Structural correlations for increased FOM in Pb doped Zn2SnO4 nanostructured films for applications as transparent electrode
•Structure-property correlations for spin coated Zn2−xPbxSnO4 nanostructured films.•Polycrystalline cubic inverse spinel ZTO phase with dominance of T2 g(3) vibrational mode.•Relative change in contributions of Pb4+ and Pb2+ oxidation states in Pb doped ZTO system.•Maximum average transparency of 87...
Saved in:
Published in | Journal of alloys and compounds Vol. 900; p. 163531 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
15.04.2022
Elsevier BV |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | •Structure-property correlations for spin coated Zn2−xPbxSnO4 nanostructured films.•Polycrystalline cubic inverse spinel ZTO phase with dominance of T2 g(3) vibrational mode.•Relative change in contributions of Pb4+ and Pb2+ oxidation states in Pb doped ZTO system.•Maximum average transparency of 87% in 400–650 nm and refractive index of 1.6 at 500 nm for x = 0.08.•Maximal carrier density of 1020 cm−3 and Haacke’s Figure of merit of 1.1 × 10−3/ Ω for x = 0.08 suitable as transparent conductor.
This work reports the detailed analysis of the structure and optoelectronic properties of spin coated Zn2−xPbxSnO4 nanostructured films. XRD studies reveal the polycrystalline cubic inverse spinel structure while Raman spectra show the dominance of T2 g(3) mode and decrease in intensity of A1 g mode with Pb doped ZTO films. X-ray photoelectron spectroscopy substantiates the dominance of atom in multiple charge states and their possible substitutions in the host lattice. The maximum average transparency of 87% in 400–650 nm spectral region for x = 0.08 sample while the decrease in optical gap from 4.32 to 4.14 eV with minimal value of 4.04 eV for x = 0.04 is found. The refractive index at 500 nm is calculated using Swanepoel’s method and found to decrease from 1.72 for ZTO and 1.59 for x = 0.08 sample. The carrier concentration increases from 1018 cm−3 for ZTO to 1020 cm−3 for x = 0.08 sample. The minimal value of electrical resistivity of 2.17 × 10−3 Ω-cm and maximal Haacke’s Figure of merit (FOM) of 1.1 × 10−3/ Ω is obtained for x = 0.08. These results are significant advancement to the development of ZTO based transparent conductors for highly efficient futuristic optoelectronics and photovoltaic devices. |
---|---|
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2021.163531 |