Self-organization processes in semiconductor under photo-induced Gunn effect

Theoretical investigation of self-organization of non-equilibrium carriers system in n-GaAs under photo-stimulated Gunn effect was performed. It was shown that the behavior of carrier system could be controlled using incident light intensity resulting in different oscillation regimes . Results obtai...

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Bibliographic Details
Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 88; no. 2; pp. 286 - 291
Main Authors Gorley, P.M, Horley, P.P, González-Hernández, J, Vorobiev, Yu.V
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 16.01.2002
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Gunn effect
High-field and nonlinear effects
n-GaAs
Non-linear system
Physics
Self-organization
Semiconductor
Semiconductor
n-GaAs
Non-linear system
Gunn effect
Self-organization
Gallium arsenides
Inorganic compounds
Self organization
Theoretical model
Charge carriers
Semiconductor materials
Physical radiation effects
Oscillations
Binary compounds
Illumination
Nonlinear systems
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Summary:Theoretical investigation of self-organization of non-equilibrium carriers system in n-GaAs under photo-stimulated Gunn effect was performed. It was shown that the behavior of carrier system could be controlled using incident light intensity resulting in different oscillation regimes . Results obtained allow us to predict application ranges for devices working on the phenomena investigated.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(01)00887-X